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1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 185 186 187 188 189 190 191 192 193 194 195 196 197 198 199 200 201 202 203 204 205 206 207 208 209 210 211 212 213 214 215 216 217 218 219 220 221 222 223 224 225 226 227 228 229 230 231 232 233 234 235 236 237 238 239 240 241 242 243 244 245 246 247 248 249 250 251 252 253 254 255 256 257 258 259 260 261 262 263 264 265 266 267 268 269 270 271 272 273 274 275 276 277 278 279 280 281 282 283 284 285 286 287 288 289 290 291 292 293 294 295 296 297 298 299 300 301 302 303 304 305 306 307 308 309 310 311 312 313 314 315 316 317 318 319 320 321 322 323 324 325 326 327 328 329 330 331 332 333 334 335 336 337 338 339 340 341 342 343 344 345 346 347 348 349 350 351 352 353 354 355 356 357 358 359 360 361 362 363 364 365 366 367 368 369 370 371 372 373 374 375 376 | /* * Copyright (c) 2018 Aurelien Jarno * * SPDX-License-Identifier: Apache-2.0 */ #define DT_DRV_COMPAT atmel_sam_flash_controller #define SOC_NV_FLASH_NODE DT_INST(0, soc_nv_flash) #define FLASH_WRITE_BLK_SZ DT_PROP(SOC_NV_FLASH_NODE, write_block_size) #define FLASH_ERASE_BLK_SZ DT_PROP(SOC_NV_FLASH_NODE, erase_block_size) #include <device.h> #include <drivers/flash.h> #include <init.h> #include <kernel.h> #include <soc.h> #include <string.h> #define LOG_LEVEL CONFIG_FLASH_LOG_LEVEL #include <logging/log.h> LOG_MODULE_REGISTER(flash_sam0); /* * The SAM flash memories use very different granularity for writing, * erasing and locking. In addition the first sector is composed of two * 8-KiB small sectors with a minimum 512-byte erase size, while the * other sectors have a minimum 8-KiB erase size. * * For simplicity reasons this flash controller driver only addresses the * flash by 8-KiB blocks (called "pages" in the Zephyr terminology). */ /* * We only use block mode erases. The datasheet gives a maximum erase time * of 200ms for a 8KiB block. */ #define SAM_FLASH_TIMEOUT_MS 220 struct flash_sam_dev_cfg { Efc *regs; }; struct flash_sam_dev_data { struct k_sem sem; }; static const struct flash_parameters flash_sam_parameters = { .write_block_size = FLASH_WRITE_BLK_SZ, .erase_value = 0xff, }; #define DEV_CFG(dev) \ ((const struct flash_sam_dev_cfg *const)(dev)->config) #define DEV_DATA(dev) \ ((struct flash_sam_dev_data *const)(dev)->data) static inline void flash_sam_sem_take(const struct device *dev) { k_sem_take(&DEV_DATA(dev)->sem, K_FOREVER); } static inline void flash_sam_sem_give(const struct device *dev) { k_sem_give(&DEV_DATA(dev)->sem); } /* Check that the offset is within the flash */ static bool flash_sam_valid_range(const struct device *dev, off_t offset, size_t len) { if (offset > CONFIG_FLASH_SIZE * 1024) { return false; } if (len && ((offset + len - 1) > (CONFIG_FLASH_SIZE * 1024))) { return false; } return true; } /* Convert an offset in the flash into a page number */ static off_t flash_sam_get_page(off_t offset) { return offset / IFLASH_PAGE_SIZE; } /* * This function checks for errors and waits for the end of the * previous command. */ static int flash_sam_wait_ready(const struct device *dev) { Efc *const efc = DEV_CFG(dev)->regs; uint64_t timeout_time = k_uptime_get() + SAM_FLASH_TIMEOUT_MS; uint32_t fsr; do { fsr = efc->EEFC_FSR; /* Flash Error Status */ if (fsr & EEFC_FSR_FLERR) { return -EIO; } /* Flash Lock Error Status */ if (fsr & EEFC_FSR_FLOCKE) { return -EACCES; } /* Flash Command Error */ if (fsr & EEFC_FSR_FCMDE) { return -EINVAL; } /* * ECC error bits are intentionally not checked as they * might be set outside of the programming code. */ /* Check for timeout */ if (k_uptime_get() > timeout_time) { return -ETIMEDOUT; } } while (!(fsr & EEFC_FSR_FRDY)); return 0; } /* This function writes a single page, either fully or partially. */ static int flash_sam_write_page(const struct device *dev, off_t offset, const void *data, size_t len) { Efc *const efc = DEV_CFG(dev)->regs; const uint32_t *src = data; uint32_t *dst = (uint32_t *)((uint8_t *)CONFIG_FLASH_BASE_ADDRESS + offset); LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len); /* We need to copy the data using 32-bit accesses */ for (; len > 0; len -= sizeof(*src)) { *dst++ = *src++; } __DSB(); /* Trigger the flash write */ efc->EEFC_FCR = EEFC_FCR_FKEY_PASSWD | EEFC_FCR_FARG(flash_sam_get_page(offset)) | EEFC_FCR_FCMD_WP; __DSB(); /* Wait for the flash write to finish */ return flash_sam_wait_ready(dev); } /* Write data to the flash, page by page */ static int flash_sam_write(const struct device *dev, off_t offset, const void *data, size_t len) { int rc; const uint8_t *data8 = data; LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len); /* Check that the offset is within the flash */ if (!flash_sam_valid_range(dev, offset, len)) { return -EINVAL; } if (!len) { return 0; } /* * Check that the offset and length are multiples of the write * block size. */ if ((offset % FLASH_WRITE_BLK_SZ) != 0) { return -EINVAL; } if ((len % FLASH_WRITE_BLK_SZ) != 0) { return -EINVAL; } flash_sam_sem_take(dev); rc = flash_sam_wait_ready(dev); if (rc < 0) { return rc; } while (len > 0) { size_t eop_len, write_len; /* Maximum size without crossing a page */ eop_len = -(offset | ~(IFLASH_PAGE_SIZE - 1)); write_len = MIN(len, eop_len); rc = flash_sam_write_page(dev, offset, data8, write_len); if (rc < 0) { goto done; } offset += write_len; data8 += write_len; len -= write_len; } done: flash_sam_sem_give(dev); return rc; } /* Read data from flash */ static int flash_sam_read(const struct device *dev, off_t offset, void *data, size_t len) { LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len); if (!flash_sam_valid_range(dev, offset, len)) { return -EINVAL; } memcpy(data, (uint8_t *)CONFIG_FLASH_BASE_ADDRESS + offset, len); return 0; } /* Erase a single 8KiB block */ static int flash_sam_erase_block(const struct device *dev, off_t offset) { Efc *const efc = DEV_CFG(dev)->regs; LOG_DBG("offset = 0x%lx", (long)offset); efc->EEFC_FCR = EEFC_FCR_FKEY_PASSWD | EEFC_FCR_FARG(flash_sam_get_page(offset) | 2) | EEFC_FCR_FCMD_EPA; __DSB(); return flash_sam_wait_ready(dev); } /* Erase multiple blocks */ static int flash_sam_erase(const struct device *dev, off_t offset, size_t len) { int rc = 0; off_t i; LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len); if (!flash_sam_valid_range(dev, offset, len)) { return -EINVAL; } if (!len) { return 0; } /* * Check that the offset and length are multiples of the write * erase block size. */ if ((offset % FLASH_ERASE_BLK_SZ) != 0) { return -EINVAL; } if ((len % FLASH_ERASE_BLK_SZ) != 0) { return -EINVAL; } flash_sam_sem_take(dev); /* Loop through the pages to erase */ for (i = offset; i < offset + len; i += FLASH_ERASE_BLK_SZ) { rc = flash_sam_erase_block(dev, i); if (rc < 0) { goto done; } } done: flash_sam_sem_give(dev); /* * Invalidate the cache addresses corresponding to the erased blocks, * so that they really appear as erased. */ SCB_InvalidateDCache_by_Addr((void *)(CONFIG_FLASH_BASE_ADDRESS + offset), len); return rc; } /* Enable or disable the write protection */ static int flash_sam_write_protection(const struct device *dev, bool enable) { Efc *const efc = DEV_CFG(dev)->regs; int rc = 0; flash_sam_sem_take(dev); if (enable) { rc = flash_sam_wait_ready(dev); if (rc < 0) { goto done; } efc->EEFC_WPMR = EEFC_WPMR_WPKEY_PASSWD | EEFC_WPMR_WPEN; } else { efc->EEFC_WPMR = EEFC_WPMR_WPKEY_PASSWD; } done: flash_sam_sem_give(dev); return rc; } #if CONFIG_FLASH_PAGE_LAYOUT /* * The notion of pages is different in Zephyr and in the SAM documentation. * Here a page refers to the granularity at which the flash can be erased. */ static const struct flash_pages_layout flash_sam_pages_layout = { .pages_count = DT_REG_SIZE(SOC_NV_FLASH_NODE) / FLASH_ERASE_BLK_SZ, .pages_size = DT_PROP(SOC_NV_FLASH_NODE, erase_block_size), }; void flash_sam_page_layout(const struct device *dev, const struct flash_pages_layout **layout, size_t *layout_size) { *layout = &flash_sam_pages_layout; *layout_size = 1; } #endif static const struct flash_parameters * flash_sam_get_parameters(const struct device *dev) { ARG_UNUSED(dev); return &flash_sam_parameters; } static int flash_sam_init(const struct device *dev) { struct flash_sam_dev_data *const data = DEV_DATA(dev); k_sem_init(&data->sem, 1, 1); return 0; } static const struct flash_driver_api flash_sam_api = { .write_protection = flash_sam_write_protection, .erase = flash_sam_erase, .write = flash_sam_write, .read = flash_sam_read, .get_parameters = flash_sam_get_parameters, #ifdef CONFIG_FLASH_PAGE_LAYOUT .page_layout = flash_sam_page_layout, #endif }; static const struct flash_sam_dev_cfg flash_sam_cfg = { .regs = (Efc *)DT_INST_REG_ADDR(0), }; static struct flash_sam_dev_data flash_sam_data; DEVICE_AND_API_INIT(flash_sam, DT_INST_LABEL(0), flash_sam_init, &flash_sam_data, &flash_sam_cfg, POST_KERNEL, CONFIG_KERNEL_INIT_PRIORITY_DEVICE, &flash_sam_api); |